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Wednesday, April 22 • 2:25pm - 2:45pm
Synthesis of Monolayer Graphene on Alpha Silicon Carbide Using Infrared LASER Ablation

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This presentation will focus on the development of our ongoing research regarding the growth of graphene on alpha silicon carbide using infrared laser ablation. We will discuss enhancements made to the experimental procedure of graphene synthesis, which are based on additional experimental data and recently published research in this area. Our changes include the introduction of an argon gas flow as well as shortened ablation time intervals. We will include analysis and results for a range of samples incorporating these additions. The continuing aim of this research is to isolate the optimal temperature and time exposure which will produce a monolayer of graphene growth using this method.

Wednesday April 22, 2015 2:25pm - 2:45pm PDT
123 Zeis Hall

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